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RB095T-60
Diodes
Schottky barrier diode
RB095T-60
Applications Switching power supply External dimensions (Unit : mm)
4.50.3 0.1
Structure
8.00.2 12.00.2
Features 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability
1.2
10.00.3 0.1
2.80.2 0.1
15.00.4 0 .2 13.5MIN
Construction Silicon epitaxial planar
1.3 0.8 (1) (2) (3)
5.00.2
0.70.1 0.05
8.0
2.60.5
ROHM : O220FN Manufacture Date
Absolute maximum ratings (Ta=25C) Parameter
Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz1cyc) Average rectified forward current (*1) Storage temperature (*1)Tc=100max per chip : Io/2
Electrical characteristic (Ta=25C)
Symbol VRM VR Io IFSM Tj Tstg
Limits 60 60 6 100 150 -40 to +150
Unit V V A A
Parameter Forward voltage Reverse current Thermal impedance
Symbol VF IR jc
Min. -
Typ. -
Max. 0.58 300 3.0
Unit V A /W
Conditions IF=3A VR=60V junction to case
Rev.B
1/3
RB095T-60
Diodes
Electrical characteristic curves
10
FORWARD CURRENT:IF(A)
1000000
REVERSE CURRENT:IR(uA)
Ta=150 Ta=125 Ta=75 Ta=25 Ta=-25
1000 f=1MHz
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
Ta=150 1 Ta=125 Ta=25 Ta=75 Ta=-25
100000 10000 1000 100 10 1 0.1 0.01 0 10 20 30
100
0.1
10
0.01 0 100 200 300 400 500 600 700 800 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS
40
50
60
1 0 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30
REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS
550
FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA)
200
Ta=25 IF=3A n=30pcs
800
Ta=25 VR=60V n=30pcs
180 160 140 120 100 80 60 40 20 0
AVE:20.8uA
750
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
540 530
AVE:532.4mV
700 650 600 550 500 450 400 350 300 AVE:514.4pF
Ta=25 f=1MHz VR=0V n=10pcs
520 510
AVE:425.2mV :1.6771mV
500
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
RESERVE RECOVERY TIME:trr(ns)
300
PEAK SURGE FORWARD CURRENT:IFSM(A)
30
Ifsm 1cyc 8.3ms
1000
PEAK SURGE FORWARD CURRENT:IFSM(A)
250 200 150
25 20 15 10 5 0 AVE:8.30ns
Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs
Ifsm 8.3ms 8.3ms 1cyc
100
AVE:163.0A 100 50 0
10 1
trr DISPERSION MAP
IFSM DISRESION MAP
10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS
100
1000
100
Ifsm t
10
IM=100mA IF=6A
TRANSIENT THAERMAL IMPEDANCE:Rth (/W)
PEAK SURGE FORWARD CURRENT:IFSM(A)
10
300us
Rth(j-a)
FORWARD POWER DISSIPATION:Pf(W)
1ms
time
D=1/2 5 Sin(180)
DC
100
1
Rth(j-c)
10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100
0.1 0.001
0
0.1 10 TIME:t(ms) Rth-t CHARACTERISTICS
1000
0
2 4 6 8 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS
10
Rev.B
2/3
RB095T-60
Diodes
15 15 0A 0V t T D=1/2 5 15 Io VR D=t/T VR=30V Tj=150 0A 0V DC D=1/2 Io t T VR D=t/T VR=30V Tj=150
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
DC 10
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
REVERSE POWER DISSIPATION:PR (W)
10 D=1/2 5 DC
Sin(180)
10
Sin(180)
5 Sin(180)
0 0 10 20 30 40 50 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 60
0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) 150
0 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc)
30 No break at 30kV
ELECTROSTATIC DISCHARGE TEST ESD(KV)
25 20 AVE:12.7kV 15 10 5 0 C=200pF R=0 C=100pF R=1.5k
ESD DISPERSION MAP
Rev.B
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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